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HiPerFASTTM IGBT with Diode
IXGH 24N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 48 A = 2.3 V = 80 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C Features
G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB)
TO-247 AD
* High frequency IGBT and antiparallel * High current handling capability * 3rd generation HDMOSTM process * MOS Gate turn-on
- drive simplicity FRED in one package
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque
1.13/10 Nm/lb.in. 6 g
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 500 8 100 2.3 V V A mA nA V
* * * *
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 A, VGE = 0 V = 250 A, VCE = VGE
Advantages
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
* Space savings (two devices in one * High power density * Suitable for surface mounting * Switching speed for high frequency * Easy to mount with 1 screw
(insulated mounting screw hole) applications package)
(c) 2003 IXYS All rights reserved
DS95583C(01/03)
IXGH 24N60BU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 13 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 175 40 90 11 120 15 S
P
TO-247 AD Outline
gfs Cies Coes Cres QG QGE QGC
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC
Dim.
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
30
Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 10 25 15 0.6 150 80 0.8 25
40 nC
ns ns 200 150 mJ ns ns
e
td(on)
tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 * VCES, 24N60BU1 higher TJ or increased RG
mJ
ns ns mJ ns ns mJ 0.83 K/W
Inductive load, TJ = 125C
IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 10 24N60BU1
15 0.8 250 100 1.4
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
K/W
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 15 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 240 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C
1 K/W
Min. Recommended Footprint (Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH 24N60BU1
50
TJ = 125C
VGE = 15V
40
VGE = 13V 11V 9V
7V
200
TJ = 25C
VGE = 15V 13V
160
IC - Amperes
IC - Amperes
30 20 10
120 80 40
11V
9V
7V 5V
5V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
50
TJ = 125C
1.6
VGE = 15V 13V 11V 9V VGE = 15V IC = 48A
IC - Amperes
7V
VCE (sat) - Normalized
40 30 20 10 0
1.4 1.2
IC = 24A
1.0
IC = 12A
5V
0.8 0.6 25
0
1
2
3
4
5
50
75
100
125
150
VCE - Volts
Fig. 3. Saturation Voltage Characteristics
TJ - Degrees C
Fig. 4. Temperature Dependence of VCE(sat)
100
VCE = 10V
1.2
BV/VGE(th) - Normalized
80
1.1 1.0 0.9 0.8 0.7 -50 -25
VGE(th) IC = 3mA
IC - Amperes
60 40
TJ = 125C
BVCES IC = 3mA
20
TJ = 25C
0
3
4
5
6
7
8
9
10
11
12
0
25
50
75
100 125 150
Fig. 5. Admittance Curves
(c) 2003 IXYS All rights reserved
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
IXGH 24N60BU1
2.5
TJ = 125C
2.5
E(ON) / E(OFF) - milliJoules
2.0 1.5
E(ON) / E(OFF) - milliJoules
RG = 10 E(OFF)
E(ON)
TJ = 125C IC = 24A
2.0 1.5 1.0
E(ON) E(OFF)
1.0 0.5 0.0
0 10 20 30 40 50
0.5 0.0
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
Fig. 8. Dependence of tfi and EOFF on RG.
15 12
IC = 24A VCE = 300V
100
9 6 3 0 0 20 40 60 80 100
IC - Amperes
VGE - Volts
10
TJ = 125C
RG = 10
1
dV/dt < 5V/ns
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
1
D=0.5 D=0.2
RthJC - K/W
0.1 D=0.1
D=0.05 D=0.02
0.01
D=0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH 24N60BU1
100 80
25 20
TJ = 125C IF = 37A VFR
1000 800 600 400 200
tfr
Current - Amperes
60 40 20 0 0.5
TJ = 100C
15 10 5 0
TJ = 25C
1.0
1.5
2.0
2.5
0
100
200
300
400
500
0 600
Voltage Drop - Volts
diF /dt - A/s
Fig.12 Maximum Forward Voltage Drop
Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR
4
TJ = 100C VR = 350V IF = 30A
max.
1.4 1.2 1.0 0.8
IRM
Qr - nanocoulombs
Normalized IRM /Qr
3
2
typ. IF = 60A
0.6 0.4 0.2 0.0 0
Qr
1
IF = 30A IF = 15A
0 40 80 120 160 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
40
TJ = 100C VR = 350V IF = 30A
max.
Fig.15 Reverse Recovery Chargee
0.8
IF = 30A
max.
TJ = 100C VR = 350V
trr - nanoseconds
30
0.6
typ. IF = 60A
IRM - Amperes
typ. IF = 60A
20
IF = 30A IF = 15A
0.4
IF = 30A IF = 15A
10
0.2
0 200 400 600
0.0 0 200 400 600
diF /dt - A/s
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
Fig.17 Reverse Recovery Time
(c) 2003 IXYS All rights reserved
tfr - nanoseconds
TJ = 150C
VFR - Volts
IXGH 24N60BU1
1.00
RthJC - K/W
0.10
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds
Fig.18 Diode Transient Thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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